| PART |
Description |
Maker |
| BU806 BU807 BU807TU |
NPN Epitaxial Silicon Darlington Transistor
High Voltage & Fast Switching Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA
晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁| 1A条一c）|52AA
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA
Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| CMPTA64 CMPTA13 CMPTA14 CMPTA63 |
SMD Small Signal Transistor PNP Darlington
complementary silicon darlington transistors
|
Central Semiconductor Corp
|
| MPSA28 MPSA28_D ON2340 MPSA29 |
(MPSA28 / MPSA29) Darlington Transistor
Darlington Transistors(NPN Silicon)
CASE 294, STYLE 1 TO2 (TO?26AA)
From old datasheet system
|
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| 2SB1316F5B 2SB1474F5B 2SD2143F5B 2SD2143F5A 2SD214 |
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 4A I(C) | TO-252
TRANSISTOR | BJT | DARLINGTON | NPN | 70V V(BR)CEO | 2A I(C) | TO-252 晶体管|晶体管|达林顿|叩| 70V的五（巴西）总裁|甲一（c）|52
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-252
|
Panasonic Industrial Solutions
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| CP117 |
Chip Form: DARLINGTON POWER TRANSISTOR
Power Transistor NPN - Darlington Chip
From old datasheet system
|
CENTRAL[Central Semiconductor Corp]
|
| FMMT734 FMMT734TA |
Discrete - Bipolar Transistors - Darlington Transistors
“SUPER SOT SOT23 PNP SILICON POWER DARLINGTON TRANSISTOR
|
Diodes Incorporated
|
| BU323A BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A.
10-Ampere N-P-N Monolithic Darlington Power Transistors
|
General Electric Solid State
GESS[GE Solid State]
|
| ZXTN04120HP5 ZXTN04120HP5TC ZXTN04120HP5-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN POWERDI?5
|
Diodes Incorporated
|
